august 1992 avionics applications rf & microwave transistors .310 x .310 2lfl (s064) hermetically sealed . refractory/gold metallization . emitter site ballasted . 5:1 vswr capability . low thermal resistance . input/output matching . overlay geometry . metal/ceramic hermetic package . p out = 6.0 w min. with 9.3 db gain description the AM80912-005 is designed for specialized avionics applications, including jtids, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. the AM80912-005 is housed in the unique impac? hermetic metal/ceramic package with pin connection branding 80912-5 order code AM80912-005 absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* (t c 75?c) 25 w i c device current* 0.9 a v cc collector-supply voltage* 32 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 7.0 c/w *applies only to rated rf amplifier operation AM80912-005 1. collector 3. emitter 2. base 4. base thermal data 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 960 1215mhz p in = 0.7w v cc = 28v 6.0 w h cf = 960 1215mhz p in = 0.7w v cc = 28v 45 % g p f = 960 1215mhz p in = 0.7w v cc = 28v 9.3 db note: pulse format: 6.4 m s on 6.6 m s off, repeat for 3.3 ms, then off for 4.5125 ms. duty cycle: burst 49.2%, overall 20.8% static symbol test conditions value unit min. typ. max. bv cbo i c = 1ma i e = 0ma 48 v bv ebo i e = 1ma i c = 0ma 3.5 v bv cer ic = 5ma r be = 10 w 48 v i ces v be = 0v v ce = 28v 0.5 ma h fe v ce = 5v i c = 250ma 30 300 dynamic AM80912-005 2/4
test circuit all dimensions are in inches. substrate material: .025 thick ai 2 o 3 c1 : 100 m f electrolytic capacitor, 63v c2 : .1 m f ceramic capacitor c3 : feedthrough bypass sci 712-022 c4 : .6 4.5 pf, 2 pls, johanson gigatrim capacitor c5 : .6 4.5 pf, 2 pls, johanson gigatrim capacitor c6 : 100 pf chip capacitor l1 : no. 26 wire, 4 turn l2 : no. 26 wire, 4 turn typical input impedance typical collector load impedance p in = 0.7 w v cc = 28 v normalized to 50 ohms l h z cl h l z in impedance data z in z cl freq. z in ( w )z cl ( w ) l = 960 mhz 8.2 + j 8.52 10.5 + j 12.9 m = 1090 mhz 11.1 + j 8.34 9.4 + j 11.3 h = 1215 mhz 15.6 + j 6.8 9.0 + j 8.3 AM80912-005 3/4
package mechanical data .318/ .306 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a AM80912-005 4/4
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